Given: |Vtp| = Vtn = 1 V
rds = 6 MΩ
For NMOS:
μnCox = 60 μA/V2
\({\left( {\frac{W}{L}} \right)_{nmos}} = 5\)
For PMOS:
μpCox = 30 μA/V2
\({\left( {\frac{w}{L}} \right)_{pmos}} = 10\)
Current through PMOS M1 and PMOS M2 will be same because they are connected in series.
Both the transistors will be in saturation because the drain is connected to the gate.
\({V_{SG\left( {M1} \right)}} = {V_{SG\left( {M2} \right)}} = \frac{{{V_{DD}}}}{2}\)
\({V_{SG\left( {M1} \right)}} = \frac{4}{2} = 2V\)
For MOS M3 and M1, the source voltages are the same and the gates are shorted, which gives:
VSG(M3) = VSG(M1) = 2 Volts
\({I_2} = \frac{1}{2}\mu_p{C_{ox}}{\left( {\frac{W}{L}} \right)_p}{\left[ {{V_{SG\left( {M3} \right)}} - \left| {{V_{tp}}} \right|} \right]^2}\)
\(I_2= \frac{1}{2} \times 30 \times {10^{ - 3}} \times 10{\left( {2 - 1} \right)^2}\)
I2 = 0.15 mA
I2 = 150 uA
The same current I2 will pass through M4
The transconductance of M4 can be given as:
\({g_{m4}} = \frac{{\partial {I_{DS}}}}{{\partial {V_{GS}}}} = {K_N}'\left( {\frac{W}{L}} \right)\left( {{V_{GS}} - {V_{tn}}} \right) \ldots 1)\)
where Kn’ = unCox = 60 μA/V2
For NMOS (M4)
\({I_{DS4}} = \frac{1}{2}{u_n}{C_{ox}}\left( {\frac{W}{L}} \right){\left( {{V_{gs}} - {V_{tn}}} \right)^2}\)
\({V_{GS}} - {V_{tn}} = \sqrt {\frac{{2{I_{DS4}}}}{{{K_N}'\left( {\frac{W}{L}} \right)}}} \)
Substituting this in (1), we get:
\({g_{m4}} = \sqrt {2{I_{DS4}}} ;\sqrt {{K_N}'\left( {\frac{W}{L}} \right)} \)
IDS4 = I2 = 150 uA
\({g_{m4}} = \sqrt {2 \times 150} \times \sqrt {60 \times 5}\)
gm4 = 300 uA/V
Drawing the small-signal model of m4.
Note: MOS – 3 is replaced by its output drain resistance rd3 = 6mΩ
\(\frac{{{V_o}}}{{{V_{in}}}} = \frac{{\left( { - {g_m}{V_{gs}}} \right)({r_{d4}}||r{d_3})}}{{{V_{gs}}}}\)
= -gm(rd4 || rd3)
= -300 × 10-6 (6 × 106 || 6 × 106)
= -300 × 10-6(3 × 106)
= -900
magnitude wise
\(\left| {\frac{{{V_o}}}{{{V_{in}}}}} \right| = 900\)