Concept:
For VDS < VGS – VT, n-channel enhancement type MOSFET will operate in triode/linear region:
ID=2LWμnCox[2(VGS−VT)VDS−VDS2]
For VDS ≥ VGS – VT, the MOSFET will be in saturation with the current given by:
ID=2LWμnCox[(VGS−VT)2]
L = Channel length
Conclusion: Since the Current is inversely proportional to Channel length, the current will increase as the length will decrease. ∴ Statement P and S are correct.
Resistance:
The current in an NMOS in the linear region is:
ID=2LWμnCox[2(VGS−VT)VDS−VDS2]
The transistor operates in the linear region for small values of VDS, i.e. neglecting higher powers of VDS, the above expression can be approximated by:
ID≈LWμnCox[(VGS−VT)VDS]
Rd=IDSVDS
Rd=LWμnCox[(VGS−VT)VDS]1
Rd=WμnCox[(VGS−VT)VDS]L
Conclusion: As the output resistance is directly proportional to the channel length, it reduces with a decrease in channel length. ∴ Statement Q is incorrect.
Threshold Voltage:
The threshold voltage of a MOSFET is given as:
VT=2ϕF−CiQd+ϕms−CiQi
From the above expression, we can conclude that the threshold voltage is also dependent on the channel length. ∴ Statement R is incorrect.